IRG7PH42UD-EP
Overview
- Low VCE (ON) trench IGBT technology Low switching losses Square RBSOA 100% of the parts tested for ILM Positive VCE (ON) temperature co-efficient Ultra fast soft recovery co-pak diode Tight parameter distribution Lead-Free IRG7PH42UDPbF IRG7PH42UD-EP C VCES = 1200V IC = 45A, TC = 100°C G E TJ(max) = 150°C Benefits
- High efficiency in a wide range of applications
- Suitable for a wide range of switching frequencies due to low VCE (ON) and low switching losses
- Rugged transient performance for increased reliability
- Excellent current sharing in parallel operation n-channel C VCE(on) typ. = 1.7V C
