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IRG7PH42U-EP - INSULATED GATE BIPOLAR TRANSISTOR

Download the IRG7PH42U-EP datasheet PDF. This datasheet also covers the IRG7PH42UPBF variant, as both devices belong to the same insulated gate bipolar transistor family and are provided as variant models within a single manufacturer datasheet.

Features

  • Low VCE (ON) trench IGBT technology.
  • Low switching losses.
  • Maximum junction temperature 175 °C.
  • Square RBSOA.
  • 100% of the parts tested for ILM.
  • Positive VCE (ON) temperature co-efficient.
  • Tight parameter distribution.
  • Lead -Free Benefits.
  • High efficiency in a wide range of.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IRG7PH42UPBF_InternationalRectifier.pdf) that lists specifications for multiple related part numbers.

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Other Datasheets by International Rectifier (now Infineon)

Part Number Description
IRG7PH42U-EP INSULATED GATE BIPOLAR TRANSISTOR
IRG7PH42UD-EP INSULATED GATE BIPOLAR TRANSISTOR
IRG7PH42UD1-EP INSULATED GATE BIPOLAR TRANSISTOR
IRG7PH42UD1MPBF INSULATED GATE BIPOLAR TRANSISTOR
IRG7PH42UD1PbF INSULATED GATE BIPOLAR TRANSISTOR

Full PDF Text Transcription

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INSULATED GATE BIPOLAR TRANSISTOR Features • Low VCE (ON) trench IGBT technology • Low switching losses • Maximum junction temperature 175 °C • Square RBSOA • 100% of the parts tested for ILM • Positive VCE (ON) temperature co-efficient • Tight parameter distribution • Lead -Free Benefits • High efficiency in a wide range of applications • Suitable for a wide range of switching frequencies due to low VCE (ON) and low switching losses • Rugged transient performance for increased reliability • Excellent current sharing in parallel operation Applications • U.P.S • Welding • Solar inverter • Induction heating C G E n-channel PD - 96233B IRG7PH42UPbF IRG7PH42U-EP VCES = 1200V IC = 60A, TC = 100°C TJ(max) =175°C VCE(on) typ. = 1.
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