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IRG7PH42U-EP - INSULATED GATE BIPOLAR TRANSISTOR

Product Overview

International Rectifier

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IRG7PH42U-EP INSULATED GATE BIPOLAR TRANSISTOR by International Rectifier - Datasheet Preview — Datasheet preview – IRG7PH42U-EP

Datasheet Details

Part number	IRG7PH42U-EP
Manufacturer	International Rectifier
File Size	293.06 KB
Description	INSULATED GATE BIPOLAR TRANSISTOR
Datasheet	IRG7PH42U-EP Datasheet
Note	This datasheet PDF includes multiple part numbers: IRG7PH42U-EP, IRG7PH42UPBF. Please refer to the document for exact specifications by model.
Additional preview pages of the IRG7PH42U-EP datasheet.

Product details

Features

Low VCE (ON) trench IGBT technology.
Low switching losses.
Maximum junction temperature 175 °C.
Square RBSOA.
100% of the parts tested for ILM.
Positive VCE (ON) temperature co-efficient.
Tight parameter distribution.
Lead -Free Benefits.
High efficiency in a wide range of.

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Published: Apr 25, 2011 |