* Low VCE(ON) and switching losses 10µs Short Circuit SOA Square RBSOA Maximum Junction Temperature 150°C Positive VCE (ON) Temperature Coefficient Base part number IRG7PH50K10DPBF IRG7PH50K10D-EPBF Absolute Maximum Ratings Parameter VCES IC @ TC = 25°C IC @ TC = 100°C ICM ILM IF @ TC = 25°C IF @ TC =
IRG7PH50K10D-EPBF Datasheet (567.79 KB)
IRG7PH50K10D-EPBF
International Rectifier
567.79 KB
Insulated gate bipolar transistor.
IRG7PH50K10DPbF IRG7PH50K10D-EPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 1200V IC = 50A, TC =100°C tSC 10µs,.
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