IRG7PH50UPBF

Manufacturer: International Rectifier (now Infineon)

IRG7PH50UPBF datasheet by International Rectifier (now Infineon).

This datasheet includes multiple variants, all published together in a single manufacturer document.

IRG7PH50UPBF Datasheet Details

Part number	IRG7PH50UPBF
Datasheet	IRG7PH50UPBF IRG7PH50U-EP Datasheet (PDF)
File Size	384.59 KB
Manufacturer	International Rectifier (now Infineon)
Description	INSULATED GATE BIPOLAR TRANSISTOR

PD - 97549 INSULATED GATE BIPOLAR TRANSISTOR.

Low VCE (ON) trench IGBT technology Low switching losses Maximum junction temperature 175 °C Square RBSOA 100% of the pa

Suitable for a wide range of switching frequencies due to low VCE (ON) and low switching losses
Rugged transient performance for increased reliability
Excellent current sharing in parallel operation

Part Number	Description
IRG7PH50U-EP	INSULATED GATE BIPOLAR TRANSISTOR
IRG7PH50K10D-EPBF	INSULATED GATE BIPOLAR TRANSISTOR
IRG7PH50K10DPBF	INSULATED GATE BIPOLAR TRANSISTOR
IRG7PH28UD1MPBF	INSULATED GATE BIPOLAR TRANSISTOR
IRG7PH28UD1PBF	INSULATED GATE BIPOLAR TRANSISTOR
IRG7PH30K10DPBF	INSULATED GATE BIPOLAR TRANSISTOR
IRG7PH30K10PBF	INSULATED GATE BIPOLAR TRANSISTOR
IRG7PH35U-EP	INSULATED GATE BIPOLAR TRANSISTOR
IRG7PH35U-EP	INSULATED GATE BIPOLAR TRANSISTOR
IRG7PH35UD-EP	INSULATED GATE BIPOLAR TRANSISTOR