IRG7PH50UPBF Datasheet Insulated Gate Bipolar Transistor

Manufacturer: International Rectifier (now Infineon)

Overview: PD - 97549 INSULATED GATE BIPOLAR TRANSISTOR.

This datasheet includes multiple variants, all published together in a single manufacturer document.

Datasheet Details

Part number	IRG7PH50UPBF
Manufacturer	International Rectifier (now Infineon)
File Size	384.59 KB
Description	INSULATED GATE BIPOLAR TRANSISTOR
Datasheet	IRG7PH50UPBF IRG7PH50U-EP Datasheet (PDF)

Key Features

Low VCE (ON) trench IGBT technology Low switching losses Maximum junction temperature 175 °C Square RBSOA 100% of the parts tested for ILM Positive VCE (ON) temperature co-efficient Tight parameter distribution Lead -Free C IRG7PH50UPbF IRG7PH50U-EP VCES = 1200V IC = 90A, TC = 100°C G E TJ(max) =175°C n-channel VCE(on) typ. = 1.7V Benefits.
High efficiency in a wide range of.

IRG7PH50UPBF Distributor & Price

Compare IRG7PH50UPBF distributor prices and check real-time stock availability from major suppliers. Prices and inventory may vary by region and order quantity.

More Datasheets from International Rectifier (now Infineon)

Part Number	Description
IRG7PH50U-EP	INSULATED GATE BIPOLAR TRANSISTOR
IRG7PH50K10D-EPBF	INSULATED GATE BIPOLAR TRANSISTOR
IRG7PH50K10DPBF	INSULATED GATE BIPOLAR TRANSISTOR
IRG7PH28UD1MPBF	INSULATED GATE BIPOLAR TRANSISTOR
IRG7PH28UD1PBF	INSULATED GATE BIPOLAR TRANSISTOR
IRG7PH30K10DPBF	INSULATED GATE BIPOLAR TRANSISTOR
IRG7PH30K10PBF	INSULATED GATE BIPOLAR TRANSISTOR
IRG7PH35U-EP	INSULATED GATE BIPOLAR TRANSISTOR
IRG7PH35U-EP	INSULATED GATE BIPOLAR TRANSISTOR
IRG7PH35UD-EP	INSULATED GATE BIPOLAR TRANSISTOR