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IRG7PH50UPBF - INSULATED GATE BIPOLAR TRANSISTOR

This page provides the datasheet information for the IRG7PH50UPBF, a member of the IRG7PH50U-EP INSULATED GATE BIPOLAR TRANSISTOR family.

Product Overview

International Rectifier

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IRG7PH50UPBF INSULATED GATE BIPOLAR TRANSISTOR by International Rectifier - Datasheet Preview — Datasheet preview – IRG7PH50UPBF

Datasheet Details

Part number	IRG7PH50UPBF
Manufacturer	International Rectifier
File Size	384.59 KB
Description	INSULATED GATE BIPOLAR TRANSISTOR
Datasheet	IRG7PH50UPBF Datasheet
Additional preview pages of the IRG7PH50UPBF datasheet.

IRG7PH50UPBF Product details

Features

Low VCE (ON) trench IGBT technology Low switching losses Maximum junction temperature 175 °C Square RBSOA 100% of the parts tested for ILM Positive VCE (ON) temperature co-efficient Tight parameter distribution Lead -Free C IRG7PH50UPbF IRG7PH50U-EP VCES = 1200V IC = 90A, TC = 100°C G E TJ(max) =175°C n-channel VCE(on) typ. = 1.7V Benefits.
High efficiency in a wide range of.

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Published: Mar 31, 2014 |