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IRG7PH28UD1MPBF - INSULATED GATE BIPOLAR TRANSISTOR

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International Rectifier

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IRG7PH28UD1MPBF INSULATED GATE BIPOLAR TRANSISTOR by International Rectifier - Datasheet Preview — Datasheet preview – IRG7PH28UD1MPBF

Datasheet Details

Part number	IRG7PH28UD1MPBF
Manufacturer	International Rectifier
File Size	409.01 KB
Description	INSULATED GATE BIPOLAR TRANSISTOR
Datasheet	IRG7PH28UD1MPBF Datasheet
Additional preview pages of the IRG7PH28UD1MPBF datasheet.

IRG7PH28UD1MPBF Product details

Features

 Low VCE (ON) trench IGBT technology.
 Low switching losses.
 Square RBSOA.
 Ultra-low VF diode.
 1300Vpk repetitive transient capacity.
 100% of the parts tested for ILM.
 Positive VCE (ON) temperature co-efficient.
 Tight parameter distribution.
 Lead-free package Benefits.
 Device optimized for induction heating and soft switching.

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Published: Mar 31, 2014 |