IRG7PH28UD1MPBF
IRG7PH28UD1MPBF is INSULATED GATE BIPOLAR TRANSISTOR manufactured by International Rectifier.
IRG7PH28UD1PbF IRG7PH28UD1MPbF
C VCES = 1200V IC = 15A, TC = 100°C
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA-LOW VF DIODE FOR INDUCTION HEATING AND SOFT SWITCHING APPLICATIONS
Features
- Low VCE (ON) trench IGBT technology
- Low switching losses
- Square RBSOA
- Ultra-low VF diode
- 1300Vpk repetitive transient capacity
- 100% of the parts tested for ILM
- Positive VCE (ON) temperature co-efficient
- Tight parameter distribution
- Lead-free package Benefits
- Device optimized for induction heating and soft switching applications
- High efficiency due to low VCE(ON), low switching losses and ultra-low VF
- Rugged transient performance for increased reliability
- ...
