IRG7PH30K10PBF Description
PD - 96156A IRG7PH30K10PbF INSULATED GATE BIPOLAR TRANSISTOR.
IRG7PH30K10PBF Key Features
- Low VCE (ON) Trench IGBT Technology Low Switching Losses Maximum Junction Temperature 175 °C 10 µS short Circuit SOA Squ
IRG7PH30K10PBF Applications
- Suitable for a Wide Range of Switching Frequencies due to Low VCE (ON) and Low Switching Losses
- Rugged Transient Performance for Increased Reliability
- Excellent Current Sharing in Parallel Operation