IRG7PH30K10PBF Datasheet | International Rectifier

- 96156A INSULATED GATE BIPOLAR TRANSISTOR Features - - - - - - - - - Low VCE (ON) Trench IGBT Technology Low Switching Losses Maximum Junction Temperature 175 °C 10 µS short Circuit SOA Square RBSOA 100% of the parts tested for ILM Positive VCE (ON) Temperature Co-Efficient Tight Parameter Distribution Lead Free Package VCES = 1200V IC = 23A, TC = 100°C G E tSC ≥ 10µs, TJ(max) =175°C n-channel VCE(on) typ. = 2.05V Benefits - High Efficiency in a Wide Range of Applications - Suitable for a Wide Range of Switching Frequencies due to Low VCE (ON) and Low Switching Losses - Rugged Transient Performance for Increased Reliability - Excellent Current Sharing in...