IRG7PH35UD1-EP datasheet by International Rectifier (now Infineon).
| Part number | IRG7PH35UD1-EP |
|---|---|
| Datasheet | IRG7PH35UD1-EP_InternationalRectifier.pdf |
| File Size | 430.92 KB |
| Manufacturer | International Rectifier (now Infineon) |
| Description | INSULATED GATE BIPOLAR TRANSISTOR |
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PD - 97455 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA-LOW VF DIODE FOR INDUCTION HEATING AND SOFT SWITCHING APPLICATIONS IRG7PH35UD1PbF IRG7PH35UD1-EP VCES = 1200V I NOMINAL = 20A.
View all International Rectifier (now Infineon) datasheets
| Part Number | Description |
|---|---|
| IRG7PH35UD1MPBF | INSULATED GATE BIPOLAR TRANSISTOR |
| IRG7PH35UD1PbF | INSULATED GATE BIPOLAR TRANSISTOR |
| IRG7PH35UD-EP | INSULATED GATE BIPOLAR TRANSISTOR |
| IRG7PH35UDPbF | INSULATED GATE BIPOLAR TRANSISTOR |
| IRG7PH35U-EP | INSULATED GATE BIPOLAR TRANSISTOR |
| IRG7PH35U-EP | INSULATED GATE BIPOLAR TRANSISTOR |
| IRG7PH35UPBF | INSULATED GATE BIPOLAR TRANSISTOR |
| IRG7PH35UPBF | INSULATED GATE BIPOLAR TRANSISTOR |
| IRG7PH30K10DPBF | INSULATED GATE BIPOLAR TRANSISTOR |
| IRG7PH30K10PBF | INSULATED GATE BIPOLAR TRANSISTOR |
