IRG7PH35UD1-EP Datasheet | International Rectifier

- 97455 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA-LOW VF DIODE FOR INDUCTION HEATING AND SOFT SWITCHING APPLICATIONS IRG7PH35UD1PbF IRG7PH35UD1-EP VCES = 1200V I NOMINAL = 20A Features - - - - - - - - - Low VCE (ON) trench IGBT Technology Low Switching Losses Square RBSOA Ultra-Low VF Diode 1300Vpk Repetitive Transient Capacity 100% of the Parts Tested for ILM Positive VCE (ON) Temperature Co-Efficient Tight Parameter Distribution Lead Free Package TJ(max) = 150°C n-channel VCE(on) typ. = 1.9V Benefits - Device optimized for induction heating and soft switching applications - High Efficiency due to Low VCE(on), low switching losses and Ultra-low VF - Rugged transient...