IRG7PH35UDPbF

Manufacturer: International Rectifier (now Infineon)

IRG7PH35UDPbF datasheet by International Rectifier (now Infineon).

This datasheet includes multiple variants, all published together in a single manufacturer document.

IRG7PH35UDPbF Datasheet Details

Part number	IRG7PH35UDPbF
Datasheet	IRG7PH35UDPbF IRG7PH35UD-EP Datasheet (PDF)
File Size	492.67 KB
Manufacturer	International Rectifier (now Infineon)
Description	INSULATED GATE BIPOLAR TRANSISTOR

PD-96288 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE.

Low VCE (ON) trench IGBT technology Low switching losses Square RBSOA 100% of the parts tested for ILM Positive VCE (O

Suitable for a wide range of switching frequencies due to low VCE (ON) and low switching losses
Rugged transient performance for increased reliability
Excellent current sharing in parallel operation

Part Number	Description
IRG7PH35UD-EP	INSULATED GATE BIPOLAR TRANSISTOR
IRG7PH35UD1-EP	INSULATED GATE BIPOLAR TRANSISTOR
IRG7PH35UD1MPBF	INSULATED GATE BIPOLAR TRANSISTOR
IRG7PH35UD1PbF	INSULATED GATE BIPOLAR TRANSISTOR
IRG7PH35U-EP	INSULATED GATE BIPOLAR TRANSISTOR
IRG7PH35U-EP	INSULATED GATE BIPOLAR TRANSISTOR
IRG7PH35UPBF	INSULATED GATE BIPOLAR TRANSISTOR
IRG7PH35UPBF	INSULATED GATE BIPOLAR TRANSISTOR
IRG7PH30K10DPBF	INSULATED GATE BIPOLAR TRANSISTOR
IRG7PH30K10PBF	INSULATED GATE BIPOLAR TRANSISTOR