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IRG7PH35UD1PbF - INSULATED GATE BIPOLAR TRANSISTOR

This page provides the datasheet information for the IRG7PH35UD1PbF, a member of the IRG7PH35UD1-EP INSULATED GATE BIPOLAR TRANSISTOR family.

Product Overview

International Rectifier

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IRG7PH35UD1PbF INSULATED GATE BIPOLAR TRANSISTOR by International Rectifier - Datasheet Preview — Datasheet preview – IRG7PH35UD1PbF

Datasheet Details

Part number	IRG7PH35UD1PbF
Manufacturer	International Rectifier
File Size	430.92 KB
Description	INSULATED GATE BIPOLAR TRANSISTOR
Datasheet	IRG7PH35UD1PbF Datasheet
Additional preview pages of the IRG7PH35UD1PbF datasheet.

IRG7PH35UD1PbF Product details

Features

Low VCE (ON) trench IGBT Technology Low Switching Losses Square RBSOA Ultra-Low VF Diode 1300Vpk Repetitive Transient Capacity 100% of the Parts Tested for ILM Positive VCE (ON) Temperature Co-Efficient Tight Parameter Distribution Lead Free Package C G E TJ(max) = 150°C n-channel C VCE(on) typ. = 1.9V Benefits.
Device optimized for induction heating and soft switching.

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Published: Apr 25, 2011 |