IRG7PH35UD1PbF
IRG7PH35UD1PbF is INSULATED GATE BIPOLAR TRANSISTOR manufactured by International Rectifier.
- Part of the IRG7PH35UD1-EP comparator family.
- Part of the IRG7PH35UD1-EP comparator family.
- 97455
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA-LOW VF DIODE FOR INDUCTION HEATING AND SOFT SWITCHING APPLICATIONS
IRG7PH35UD1PbF IRG7PH35UD1-EP
VCES = 1200V I NOMINAL = 20A
Features
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- Low VCE (ON) trench IGBT Technology Low Switching Losses Square RBSOA Ultra-Low VF Diode 1300Vpk Repetitive Transient Capacity 100% of the Parts Tested for ILM Positive VCE (ON) Temperature Co-Efficient Tight Parameter Distribution Lead Free Package
TJ(max) = 150°C n-channel
VCE(on) typ. = 1.9V
Benefits
- Device optimized for induction heating and soft switching applications
- High Efficiency due to Low VCE(on), low switching losses and Ultra-low VF
- Rugged transient...
