IRG7PH35UD1MPBF Description
IRG7PH35UD1MPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA-LOW VF DIODE FOR INDUCTION HEATING AND SOFT SWITCHING APPLICATIONS.
IRG7PH35UD1MPBF Key Features
- Low VCE (ON) trench IGBT Technology Low Switching Losses Square RBSOA Ultra-Low VF Diode 1300Vpk Repetitive Transient Ca
- Device optimized for induction heating and soft switching