IRG7PH35UD1MPBF Datasheet | International Rectifier

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA-LOW VF DIODE FOR INDUCTION HEATING AND SOFT SWITCHING APPLICATIONS Features - - - - - - - - - Low VCE (ON) trench IGBT Technology Low Switching Losses Square RBSOA Ultra-Low VF Diode 1300Vpk Repetitive Transient Capacity 100% of the Parts Tested for ILM Positive VCE (ON) Temperature Co-Efficient Tight Parameter Distribution Lead Free Package VCES = 1200V IC = 25A, TC = 100°C TJ(max) = 150°C n-channel VCE(on) typ. = 1.9V @ IC = 20A Benefits - Device optimized for induction heating and soft switching applications - High Efficiency due to Low VCE(on), low switching losses and Ultra-low VF - Rugged transient performance...