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IRG7PH35UD1MPBF Datasheet Insulated Gate Bipolar Transistor

Manufacturer: International Rectifier (now Infineon)

Overview: IRG7PH35UD1MPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA-LOW VF DIODE FOR INDUCTION HEATING AND SOFT SWITCHING.

IRG7PH35UD1MPBF datasheet preview

Datasheet Details

Part number	IRG7PH35UD1MPBF
Manufacturer	International Rectifier (now Infineon)
File Size	306.47 KB
Description	INSULATED GATE BIPOLAR TRANSISTOR
Datasheet	IRG7PH35UD1MPBF-InternationalRectifier.pdf

Key Features

Low VCE (ON) trench IGBT Technology Low Switching Losses Square RBSOA Ultra-Low VF Diode 1300Vpk Repetitive Transient Capacity 100% of the Parts Tested for ILM Positive VCE (ON) Temperature Co-Efficient Tight Parameter Distribution Lead Free Package C VCES = 1200V IC = 25A, TC = 100°C G E TJ(max) = 150°C n-channel VCE(on) typ. = 1.9V @ IC = 20A Benefits.
Device optimized for induction heatin.

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