IRG7PH35U-EP Description
PD - 97479 INSULATED GATE BIPOLAR TRANSISTOR.
IRG7PH35U-EP Key Features
- Low VCE (ON) trench IGBT technology Low switching losses Maximum junction temperature 175 °C Square RBSOA 100% of the pa
IRG7PH35U-EP Applications
- Suitable for a wide range of switching frequencies due to low VCE (ON) and low switching losses
- Rugged transient performance for increased reliability
- Excellent current sharing in parallel operation