IRG7PH35U-EP Datasheet | International Rectifier

- 97479 INSULATED GATE BIPOLAR TRANSISTOR Features - - - - - - - - Low VCE (ON) trench IGBT technology Low switching losses Maximum junction temperature 175 °C Square RBSOA 100% of the parts tested for ILM Positive VCE (ON) temperature co-efficient Tight parameter distribution Lead -Free IRG7PH35UPbF IRG7PH35U-EP VCES = 1200V I NOMINAL = 20A TJ(max) = 175°C n-channel VCE(on) typ. = 1.9V Benefits - High efficiency in a wide range of applications - Suitable for a wide range of switching frequencies due to low VCE (ON) and low switching losses - Rugged transient performance for increased reliability - Excellent current sharing in parallel operation Applications - -...