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IRG7PH35U-EP

Manufacturer: International Rectifier (now Infineon)

IRG7PH35U-EP datasheet by International Rectifier (now Infineon).

IRG7PH35U-EP datasheet preview

IRG7PH35U-EP Datasheet Details

Part number	IRG7PH35U-EP
Datasheet	IRG7PH35U-EP-InternationalRectifier.pdf
File Size	397.80 KB
Manufacturer	International Rectifier (now Infineon)
Description	INSULATED GATE BIPOLAR TRANSISTOR

IRG7PH35U-EP Overview

PD - 97479 INSULATED GATE BIPOLAR TRANSISTOR.

IRG7PH35U-EP Key Features

Low VCE (ON) trench IGBT technology Low switching losses Maximum junction temperature 175 °C Square RBSOA 100% of the pa

IRG7PH35U-EP Applications

Suitable for a wide range of switching frequencies due to low VCE (ON) and low switching losses
Rugged transient performance for increased reliability
Excellent current sharing in parallel operation

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