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IRG7PH35U-EP - INSULATED GATE BIPOLAR TRANSISTOR

Product Overview

International Rectifier

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IRG7PH35U-EP INSULATED GATE BIPOLAR TRANSISTOR by International Rectifier - Datasheet Preview — Datasheet preview – IRG7PH35U-EP

Datasheet Details

Part number	IRG7PH35U-EP
Manufacturer	International Rectifier
File Size	397.80 KB
Description	INSULATED GATE BIPOLAR TRANSISTOR
Datasheet	IRG7PH35U-EP Datasheet
Additional preview pages of the IRG7PH35U-EP datasheet.

IRG7PH35U-EP Product details

Features

Low VCE (ON) trench IGBT technology Low switching losses Maximum junction temperature 175 °C Square RBSOA 100% of the parts tested for ILM Positive VCE (ON) temperature co-efficient Tight parameter distribution Lead -Free IRG7PH35UPbF IRG7PH35U-EP C VCES = 1200V I.

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Published: Mar 31, 2014 |