IRG7PH35UD-EP Datasheet | International Rectifier

PD-96288 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features - - - - - - - - Low VCE (ON) trench IGBT technology Low switching losses Square RBSOA 100% of the parts tested for ILM  Positive VCE (ON) temperature co-efficient Ultra fast soft recovery co-pak diode Tight parameter distribution Lead-Free IRG7PH35UDPbF IRG7PH35UD-EP VCES = 1200V I NOMINAL = 20A TJ(max) = 150°C Benefits - High efficiency in a wide range of applications - Suitable for a wide range of switching frequencies due to low VCE (ON) and low switching losses - Rugged transient performance for increased reliability - Excellent current sharing in parallel operation n-channel VCE(on)...