IRG7PH35UD-EP Description
PD-96288 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE.
IRG7PH35UD-EP Key Features
- Low VCE (ON) trench IGBT technology Low switching losses Square RBSOA 100% of the parts tested for ILM Positive VCE (O
IRG7PH35UD-EP Applications
- Suitable for a wide range of switching frequencies due to low VCE (ON) and low switching losses
- Rugged transient performance for increased reliability
- Excellent current sharing in parallel operation