IRG7PH35U-EP
IRG7PH35U-EP is INSULATED GATE BIPOLAR TRANSISTOR manufactured by International Rectifier.
- Part of the IRG7PH35UPBF comparator family.
- Part of the IRG7PH35UPBF comparator family.
- 97479
INSULATED GATE BIPOLAR TRANSISTOR Features
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- - Low VCE (ON) trench IGBT technology Low switching losses Maximum junction temperature 175 °C Square RBSOA 100% of the parts tested for ILM Positive VCE (ON) temperature co-efficient Tight parameter distribution Lead -Free
IRG7PH35UPbF IRG7PH35U-EP
VCES = 1200V I NOMINAL = 20A
TJ(max) = 175°C n-channel
VCE(on) typ. = 1.9V
Benefits
- High efficiency in a wide range of applications
- Suitable for a wide range of switching frequencies due to low VCE (ON) and low switching losses
- Rugged transient performance for increased reliability
- Excellent current sharing in parallel operation
Applications
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