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IRG7PH35U-EP Datasheet Insulated Gate Bipolar Transistor

Manufacturer: International Rectifier (now Infineon)

Overview: PD - 97479 INSULATED GATE BIPOLAR TRANSISTOR.

This datasheet includes multiple variants, all published together in a single manufacturer document.

Key Features

  • Low VCE (ON) trench IGBT technology Low switching losses Maximum junction temperature 175 °C Square RBSOA 100% of the parts tested for ILM Positive VCE (ON) temperature co-efficient Tight parameter distribution Lead -Free IRG7PH35UPbF IRG7PH35U-EP C VCES = 1200V I.

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