IRG7PH35U-EP

Manufacturer: International Rectifier (now Infineon)

IRG7PH35U-EP datasheet by International Rectifier (now Infineon).

This datasheet includes multiple variants, all published together in a single manufacturer document.

IRG7PH35U-EP Datasheet Details

Part number	IRG7PH35U-EP
Datasheet	IRG7PH35U-EP IRG7PH35UPBF Datasheet (PDF)
File Size	397.82 KB
Manufacturer	International Rectifier (now Infineon)
Description	INSULATED GATE BIPOLAR TRANSISTOR

PD - 97479 INSULATED GATE BIPOLAR TRANSISTOR.

Low VCE (ON) trench IGBT technology Low switching losses Maximum junction temperature 175 °C Square RBSOA 100% of the pa

Suitable for a wide range of switching frequencies due to low VCE (ON) and low switching losses
Rugged transient performance for increased reliability
Excellent current sharing in parallel operation

Part Number	Description
IRG7PH35U-EP	INSULATED GATE BIPOLAR TRANSISTOR
IRG7PH35UD-EP	INSULATED GATE BIPOLAR TRANSISTOR
IRG7PH35UD1-EP	INSULATED GATE BIPOLAR TRANSISTOR
IRG7PH35UD1MPBF	INSULATED GATE BIPOLAR TRANSISTOR
IRG7PH35UD1PbF	INSULATED GATE BIPOLAR TRANSISTOR
IRG7PH35UDPbF	INSULATED GATE BIPOLAR TRANSISTOR
IRG7PH35UPBF	INSULATED GATE BIPOLAR TRANSISTOR
IRG7PH35UPBF	INSULATED GATE BIPOLAR TRANSISTOR
IRG7PH30K10DPBF	INSULATED GATE BIPOLAR TRANSISTOR
IRG7PH30K10PBF	INSULATED GATE BIPOLAR TRANSISTOR