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IRG7PH30K10DPBF Datasheet Insulated Gate Bipolar Transistor

Manufacturer: International Rectifier (now Infineon)

Overview: PD - 97403 IRG7PH30K10DPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY.

IRG7PH30K10DPBF datasheet preview

Datasheet Details

Part number	IRG7PH30K10DPBF
Manufacturer	International Rectifier (now Infineon)
File Size	467.29 KB
Description	INSULATED GATE BIPOLAR TRANSISTOR
Datasheet	IRG7PH30K10DPBF_InternationalRectifier.pdf

Key Features

Low VCE (ON) Trench IGBT Technology Low switching losses 10 µS short circuit SOA Square RBSOA 100% of the parts tested for ILM Positive VCE (ON) Temperature co-efficient Ultra fast soft Recovery Co-Pak Diode Tight parameter distribution Lead Free Package C VCES = 1200V IC = 16A, TC = 100°C G E tSC ≥ 10µs, TJ(max) = 150°C n-channel C VCE(on) typ. = 2.05V Benefits.
High Efficiency in a wide ra.

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