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IRG7PH30K10DPBF - INSULATED GATE BIPOLAR TRANSISTOR

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International Rectifier

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IRG7PH30K10DPBF INSULATED GATE BIPOLAR TRANSISTOR by International Rectifier - Datasheet Preview — Datasheet preview – IRG7PH30K10DPBF

Datasheet Details

Part number	IRG7PH30K10DPBF
Manufacturer	International Rectifier
File Size	467.29 KB
Description	INSULATED GATE BIPOLAR TRANSISTOR
Datasheet	IRG7PH30K10DPBF Datasheet
Additional preview pages of the IRG7PH30K10DPBF datasheet.

IRG7PH30K10DPBF Product details

Features

Low VCE (ON) Trench IGBT Technology Low switching losses 10 µS short circuit SOA Square RBSOA 100% of the parts tested for ILM Positive VCE (ON) Temperature co-efficient Ultra fast soft Recovery Co-Pak Diode Tight parameter distribution Lead Free Package C VCES = 1200V IC = 16A, TC = 100°C G E tSC ≥ 10µs, TJ(max) = 150°C n-channel C VCE(on) typ. = 2.05V Benefits.
High Efficiency in a wide ra.

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Published: Apr 25, 2011 |