IRG7PH30K10DPBF Datasheet | International Rectifier

- 97403 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features - - - - - - - - - Low VCE (ON) Trench IGBT Technology Low switching losses 10 µS short circuit SOA Square RBSOA 100% of the parts tested for ILM Positive VCE (ON) Temperature co-efficient Ultra fast soft Recovery Co-Pak Diode Tight parameter distribution Lead Free Package VCES = 1200V IC = 16A, TC = 100°C G E tSC ≥ 10µs, TJ(max) = 150°C n-channel VCE(on) typ. = 2.05V Benefits - High Efficiency in a wide range of applications - Suitable for a wide range of switching frequencies due to Low VCE (ON) and Low Switching losses - Rugged transient Performance for increased...