Datasheet4U Logo Datasheet4U.com

IRG7PH28UD1PBF - INSULATED GATE BIPOLAR TRANSISTOR

Download the IRG7PH28UD1PBF datasheet PDF. This datasheet also covers the IRG7PH28UD1MPBF variant, as both devices belong to the same insulated gate bipolar transistor family and are provided as variant models within a single manufacturer datasheet.

Key Features

  •  Low VCE (ON) trench IGBT technology.
  •  Low switching losses.
  •  Square RBSOA.
  •  Ultra-low VF diode.
  •  1300Vpk repetitive transient capacity.
  •  100% of the parts tested for ILM.
  •  Positive VCE (ON) temperature co-efficient.
  •  Tight parameter distribution.
  •  Lead-free package Benefits.
  •  Device optimized for induction heating and soft switching.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IRG7PH28UD1MPBF-InternationalRectifier.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
IRG4BC20F INSULATED GATE BIPOLAR TRANSISTOR IRF
IRG4BC20FD INSULATED GATE BIPOLAR TRANSISTOR IRF
IRG4BC20FD-S INSULATED GATE BIPOLAR TRANSISTOR IRF
IRG4BC20K INSULATED GATE BIPOLAR TRANSISTOR IRF
IRG4BC20K-S INSULATED GATE BIPOLAR TRANSISTOR IRF

Other Datasheets by International Rectifier (now Infineon)

Part Number Description
IRG7PH28UD1MPBF INSULATED GATE BIPOLAR TRANSISTOR
IRG7PH30K10DPBF INSULATED GATE BIPOLAR TRANSISTOR
IRG7PH30K10PBF INSULATED GATE BIPOLAR TRANSISTOR
IRG7PH35U-EP INSULATED GATE BIPOLAR TRANSISTOR
IRG7PH35U-EP INSULATED GATE BIPOLAR TRANSISTOR

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
  IRG7PH28UD1PbF IRG7PH28UD1MPbF  C   VCES = 1200V IC = 15A, TC = 100°C G E INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA-LOW VF DIODE FOR INDUCTION HEATING AND SOFT SWITCHING APPLICATIONS Features  Low VCE (ON) trench IGBT technology  Low switching losses  Square RBSOA  Ultra-low VF diode  1300Vpk repetitive transient capacity  100% of the parts tested for ILM  Positive VCE (ON) temperature co-efficient  Tight parameter distribution  Lead-free package Benefits  Device optimized for induction heating and soft switching applications  High efficiency due to low VCE(ON), low switching losses and ultra-low VF  Rugged transient performance for increased reliability  Excellent current sharing in parallel operation  Low EMI Base part number IRG7PH28UD1PbF IRG7PH28UD