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IRG7PH28UD1PBF Datasheet Insulated Gate Bipolar Transistor

Manufacturer: International Rectifier (now Infineon)

Overview:   IRG7PH28UD1PbF IRG7PH28UD1MPbF  C   VCES = 1200V IC = 15A, TC = 100°C G E INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA-LOW VF DIODE FOR INDUCTION HEATING AND SOFT SWITCHING.

This datasheet includes multiple variants, all published together in a single manufacturer document.

Key Features

  •  Low VCE (ON) trench IGBT technology.
  •  Low switching losses.
  •  Square RBSOA.
  •  Ultra-low VF diode.
  •  1300Vpk repetitive transient capacity.
  •  100% of the parts tested for ILM.
  •  Positive VCE (ON) temperature co-efficient.
  •  Tight parameter distribution.
  •  Lead-free package Benefits.
  •  Device optimized for induction heating and soft switching.

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