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IRG7PH28UD1PBF - INSULATED GATE BIPOLAR TRANSISTOR

This page provides the datasheet information for the IRG7PH28UD1PBF, a member of the IRG7PH28UD1MPBF INSULATED GATE BIPOLAR TRANSISTOR family.

Product Overview

International Rectifier

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IRG7PH28UD1PBF INSULATED GATE BIPOLAR TRANSISTOR by International Rectifier - Datasheet Preview — Datasheet preview – IRG7PH28UD1PBF

Datasheet Details

Part number	IRG7PH28UD1PBF
Manufacturer	International Rectifier
File Size	409.01 KB
Description	INSULATED GATE BIPOLAR TRANSISTOR
Datasheet	IRG7PH28UD1PBF Datasheet
Additional preview pages of the IRG7PH28UD1PBF datasheet.

IRG7PH28UD1PBF Product details

Features

 Low VCE (ON) trench IGBT technology.
 Low switching losses.
 Square RBSOA.
 Ultra-low VF diode.
 1300Vpk repetitive transient capacity.
 100% of the parts tested for ILM.
 Positive VCE (ON) temperature co-efficient.
 Tight parameter distribution.
 Lead-free package Benefits.
 Device optimized for induction heating and soft switching.

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Published: Mar 31, 2014 |