IRG7PH28UD1PBF datasheet by International Rectifier (now Infineon).
This datasheet includes multiple variants, all published together in a single manufacturer document.
| Part number | IRG7PH28UD1PBF |
|---|---|
| Datasheet | IRG7PH28UD1PBF IRG7PH28UD1MPBF Datasheet (PDF) |
| File Size | 409.01 KB |
| Manufacturer | International Rectifier (now Infineon) |
| Description | INSULATED GATE BIPOLAR TRANSISTOR |
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IRG7PH28UD1PbF IRG7PH28UD1MPbF C VCES = 1200V IC = 15A, TC = 100°C G E INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA-LOW VF DIODE FOR INDUCTION HEATING AND SOFT SWITCHING APPLICATIONS.
View all International Rectifier (now Infineon) datasheets
| Part Number | Description |
|---|---|
| IRG7PH28UD1MPBF | INSULATED GATE BIPOLAR TRANSISTOR |
| IRG7PH30K10DPBF | INSULATED GATE BIPOLAR TRANSISTOR |
| IRG7PH30K10PBF | INSULATED GATE BIPOLAR TRANSISTOR |
| IRG7PH35U-EP | INSULATED GATE BIPOLAR TRANSISTOR |
| IRG7PH35U-EP | INSULATED GATE BIPOLAR TRANSISTOR |
| IRG7PH35UD-EP | INSULATED GATE BIPOLAR TRANSISTOR |
| IRG7PH35UD1-EP | INSULATED GATE BIPOLAR TRANSISTOR |
| IRG7PH35UD1MPBF | INSULATED GATE BIPOLAR TRANSISTOR |
| IRG7PH35UD1PbF | INSULATED GATE BIPOLAR TRANSISTOR |
| IRG7PH35UDPbF | INSULATED GATE BIPOLAR TRANSISTOR |
