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PD - 97549
INSULATED GATE BIPOLAR TRANSISTOR Features
• • • • • • • • Low VCE (ON) trench IGBT technology Low switching losses Maximum junction temperature 175 °C Square RBSOA 100% of the parts tested for ILM Positive VCE (ON) temperature co-efficient Tight parameter distribution Lead -Free
C
IRG7PH50UPbF IRG7PH50U-EP
VCES = 1200V IC = 90A, TC = 100°C
G E
TJ(max) =175°C
n-channel
VCE(on) typ. = 1.7V
Benefits
• High efficiency in a wide range of applications • Suitable for a wide range of switching frequencies due to low VCE (ON) and low switching losses • Rugged transient performance for increased reliability • Excellent current sharing in parallel operation
C C
GC
E
Applications
• • • • U.P.
IRG7PH50UPBF Datasheet
