IRG7PH50UPBF Features
* Low VCE (ON) trench IGBT technology Low switching losses Maximum junction temperature 175 °C Square RBSOA 100% of the parts tested for ILM Positive VCE (ON) temperature co-efficient Tight parameter distribution Lead -Fre
IRG7PH50U-EP-InternationalRectifier.pdf
Datasheet Details
IRG7PH50UPBF, IRG7PH50U-EP
International Rectifier
384.59 KB
Insulated gate bipolar transistor.
This datasheet PDF includes multiple part numbers: IRG7PH50UPBF, IRG7PH50U-EP.
Please refer to the document for exact specifications by model.
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IRG7PH50UPBF Distributor
