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IRG7SC12FPBF Datasheet - International Rectifier

INSULATED GATE BIPOLAR TRANSISTOR

IRG7SC12FPBF Features

* Low VCE (ON) Trench IGBT Technology Maximum Junction temperature 150 °C 3 μS short circuit SOA Square RBSOA Positive VCE (ON) Temperature co-efficient Tight parameter distribution Lead Free Package C VCES = 600V IC = 8A, TC = 100

IRG7SC12FPBF Datasheet (314.80 KB)

Preview of IRG7SC12FPBF PDF

Datasheet Details

Part number:

IRG7SC12FPBF

Manufacturer:

International Rectifier

File Size:

314.80 KB

Description:

Insulated gate bipolar transistor.

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IRG7SC12FPBF INSULATED GATE BIPOLAR TRANSISTOR International Rectifier

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