IRG71C28U Overview
This IGBT is specifically designed for applications in Plasma Display Panels. This device utilizes advanced trench IGBT technology to achieve low CVE(on) and low EPULSETM rating per silicon area which improve panel efficiency.
IRG71C28U datasheet by International Rectifier (now Infineon).
This datasheet includes multiple variants, all published together in a single manufacturer document.
| Part number | IRG71C28U |
|---|---|
| Datasheet | IRG71C28U IRG7IC28UPBF Datasheet (PDF) |
| File Size | 385.43 KB |
| Manufacturer | International Rectifier (now Infineon) |
| Description | PDP TRENCH IGBT |
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This IGBT is specifically designed for applications in Plasma Display Panels. This device utilizes advanced trench IGBT technology to achieve low CVE(on) and low EPULSETM rating per silicon area which improve panel efficiency.
View all International Rectifier (now Infineon) datasheets
| Part Number | Description |
|---|---|
| IRG7I313UPBF | PDP TRENCH IGBT |
| IRG7IC28U | PDP TRENCH IGBT |
| IRG7IC28UPBF | PDP TRENCH IGBT |
| IRG7PG35U-EPbF | INSULATED GATE BIPOLAR TRANSISTOR |
| IRG7PG35UPBF | INSULATED GATE BIPOLAR TRANSISTOR |
| IRG7PG42UD-EPbF | INSULATED GATE BIPOLAR TRANSISTOR |
| IRG7PG42UDPBF | INSULATED GATE BIPOLAR TRANSISTOR |
| IRG7PH28UD1MPBF | INSULATED GATE BIPOLAR TRANSISTOR |
| IRG7PH28UD1PBF | INSULATED GATE BIPOLAR TRANSISTOR |
| IRG7PH30K10DPBF | INSULATED GATE BIPOLAR TRANSISTOR |