IRG7PG35U-EPbF Description
IRG7PG35UPbF IRG7PG35U-EPbF INSULATED GATE BIPOLAR TRANSISTOR.
IRG7PG35U-EPbF Key Features
- Low VCE (ON) trench IGBT technology - Low switching losses - Square RBSOA - 100% of the parts tested for ILM - Po
- Part: IRG7PG35U-EPbF
- Manufacturer: International Rectifier
- Size: 411.36 KB
Related International Rectifier Datasheets
| Part Number | Description |
|---|---|
| IRG7PG35UPBF | INSULATED GATE BIPOLAR TRANSISTOR |
| IRG7PG42UD-EPbF | INSULATED GATE BIPOLAR TRANSISTOR |
| IRG7PG42UDPBF | INSULATED GATE BIPOLAR TRANSISTOR |
| IRG7PH28UD1MPBF | INSULATED GATE BIPOLAR TRANSISTOR |
| IRG7PH28UD1PBF | INSULATED GATE BIPOLAR TRANSISTOR |