IRG7PG35U-EPbF Overview
IRG7PG35UPbF IRG7PG35U-EPbF INSULATED GATE BIPOLAR TRANSISTOR.
IRG7PG35U-EPbF Key Features
- Low VCE (ON) trench IGBT technology - Low switching losses - Square RBSOA - 100% of the parts tested for ILM - Po
IRG7PG35U-EPbF datasheet by International Rectifier (now Infineon).
This datasheet includes multiple variants, all published together in a single manufacturer document.
| Part number | IRG7PG35U-EPbF |
|---|---|
| Datasheet | IRG7PG35U-EPbF IRG7PG35UPBF Datasheet (PDF) |
| File Size | 411.36 KB |
| Manufacturer | International Rectifier (now Infineon) |
| Description | INSULATED GATE BIPOLAR TRANSISTOR |
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IRG7PG35UPbF IRG7PG35U-EPbF INSULATED GATE BIPOLAR TRANSISTOR.
View all International Rectifier (now Infineon) datasheets
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|---|---|
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| IRG7PH30K10PBF | INSULATED GATE BIPOLAR TRANSISTOR |
| IRG7PH35U-EP | INSULATED GATE BIPOLAR TRANSISTOR |
| IRG7PH35U-EP | INSULATED GATE BIPOLAR TRANSISTOR |
| IRG7PH35UD-EP | INSULATED GATE BIPOLAR TRANSISTOR |