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IRG7PG35U-EPbF - INSULATED GATE BIPOLAR TRANSISTOR

This page provides the datasheet information for the IRG7PG35U-EPbF, a member of the IRG7PG35UPBF INSULATED GATE BIPOLAR TRANSISTOR family.

Product Overview

International Rectifier

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IRG7PG35U-EPbF INSULATED GATE BIPOLAR TRANSISTOR by International Rectifier - Datasheet Preview — Datasheet preview – IRG7PG35U-EPbF

Datasheet Details

Part number	IRG7PG35U-EPbF
Manufacturer	International Rectifier
File Size	411.36 KB
Description	INSULATED GATE BIPOLAR TRANSISTOR
Datasheet	IRG7PG35U-EPbF Datasheet
Additional preview pages of the IRG7PG35U-EPbF datasheet.

IRG7PG35U-EPbF Product details

Features

 Low VCE (ON) trench IGBT technology.
 Low switching losses.
 Square RBSOA.
 100% of the parts tested for ILM.
 Positive VCE (ON) temperature co-efficient.
 Tight parameter distribution.
 Lead-free package C G E n-channel C VCES = 1000V IC = 35A, TC = 100°C TJ(MAX) = 175°C VCE(ON) typ. = 1.9V@ IC = 20A C Benefits.
 High efficiency in a wide range of.

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Published: Feb 4, 2016 |