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IRG7PG42UDPbF IRG7PG42UD-EPbF
INSULATED GATE BIPOLAR TRANSISTOR
Features Low VCE (ON) trench IGBT technology Low switching losses Square RBSOA 100% of the parts tested for ILM Positive VCE (ON) temperature co-efficient Ultra fast soft recovery co-pak diode Tight parameter distribution Lead-free package
Benefits
High efficiency in a wide range of applications Suitable for a wide range of switching frequencies
due to low VCE(on) and low switching losses Rugged transient performance for increased reliability Excellent current sharing in parallel operation
Applications
U.P.S. Welding Solar Inverter Induction heating
C
G E
n-channel
C
VCES = 1000V
IC = 45A, TC = 100°C TJ(MAX) = 150°C
VCE(ON) typ. = 1.
IRG7PG42UD-EPbF Datasheet
