IRG7PG35UPBF Overview
IRG7PG35UPbF IRG7PG35U-EPbF INSULATED GATE BIPOLAR TRANSISTOR.
IRG7PG35UPBF Key Features
- Low VCE (ON) trench IGBT technology - Low switching losses - Square RBSOA - 100% of the parts tested for ILM - Po
IRG7PG35UPBF datasheet by International Rectifier (now Infineon).
| Part number | IRG7PG35UPBF |
|---|---|
| Datasheet | IRG7PG35UPBF-InternationalRectifier.pdf |
| File Size | 411.36 KB |
| Manufacturer | International Rectifier (now Infineon) |
| Description | INSULATED GATE BIPOLAR TRANSISTOR |
|
|
|
IRG7PG35UPbF IRG7PG35U-EPbF INSULATED GATE BIPOLAR TRANSISTOR.
View all International Rectifier (now Infineon) datasheets
| Part Number | Description |
|---|---|
| IRG7PG35U-EPbF | INSULATED GATE BIPOLAR TRANSISTOR |
| IRG7PG42UD-EPbF | INSULATED GATE BIPOLAR TRANSISTOR |
| IRG7PG42UDPBF | INSULATED GATE BIPOLAR TRANSISTOR |
| IRG7PH28UD1MPBF | INSULATED GATE BIPOLAR TRANSISTOR |
| IRG7PH28UD1PBF | INSULATED GATE BIPOLAR TRANSISTOR |
| IRG7PH30K10DPBF | INSULATED GATE BIPOLAR TRANSISTOR |
| IRG7PH30K10PBF | INSULATED GATE BIPOLAR TRANSISTOR |
| IRG7PH35U-EP | INSULATED GATE BIPOLAR TRANSISTOR |
| IRG7PH35U-EP | INSULATED GATE BIPOLAR TRANSISTOR |
| IRG7PH35UD-EP | INSULATED GATE BIPOLAR TRANSISTOR |