IRG7PG35UPBF
IRG7PG35UPBF is INSULATED GATE BIPOLAR TRANSISTOR manufactured by International Rectifier.
IRG7PG35UPbF IRG7PG35U-EPbF
INSULATED GATE BIPOLAR TRANSISTOR
Features
- Low VCE (ON) trench IGBT technology
- Low switching losses
- Square RBSOA
- 100% of the parts tested for ILM
- Positive VCE (ON) temperature co-efficient
- Tight parameter distribution
- Lead-free package
C
G E n-channel C
VCES = 1000V IC = 35A, TC = 100°C TJ(MAX) = 175°C
VCE(ON) typ. = 1.9V@ IC = 20A
Benefits
- High efficiency in a wide range of applications
- Suitable for a wide range of switching frequencies due to low
VCE(on) and low switching losses
- Rugged transient performance for increased reliability
- Excellent current sharing in parallel operation
Applications
- U.P.S.
- Welding
-...
