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IRG7IC28U - PDP TRENCH IGBT

Download the IRG7IC28U datasheet PDF. This datasheet also covers the IRG7IC28UPBF variant, as both devices belong to the same pdp trench igbt family and are provided as variant models within a single manufacturer datasheet.

General Description

This IGBT is specifically designed for applications in Plasma Display Panels.

This device utilizes advanced trench IGBT technology to achieve low CVE(on) and low EPULSETM rating per silicon area which improve panel efficiency.

Key Features

  • l Advanced Trench IGBT Technology Key Parameters VCE min 600 V l Optimized for Sustain and Energy Recovery circuits in PDP.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IRG7IC28UPBF-InternationalRectifier.pdf) that lists specifications for multiple related part numbers.

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Other Datasheets by International Rectifier (now Infineon)

Part Number Description
IRG7IC28UPBF PDP TRENCH IGBT
IRG7I313UPBF PDP TRENCH IGBT
IRG71C28U PDP TRENCH IGBT
IRG7PG35U-EPbF INSULATED GATE BIPOLAR TRANSISTOR
IRG7PG35UPBF INSULATED GATE BIPOLAR TRANSISTOR

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
PDP TRENCH IGBT PD - 97562 IRG7IC28UPbF Features l Advanced Trench IGBT Technology Key Parameters VCE min 600 V l Optimized for Sustain and Energy Recovery circuits in PDP applications c VCE(ON) typ. @ IC = 40A IRP max @ TC= 25°C 1.70 225 V A l Low VCE(on) and Energy per Pulse (EPULSETM) TJ max 150 °C for improved panel efficiency l High repetitive peak current capability l Lead Free package C G E n-channel CE G TO-220AB Full-Pak G Gate C Collector E Emitter Description This IGBT is specifically designed for applications in Plasma Display Panels. This device utilizes advanced trench IGBT technology to achieve low CVE(on) and low EPULSETM rating per silicon area which improve panel efficiency.