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IRG7IC28UPBF - PDP TRENCH IGBT

General Description

This IGBT is specifically designed for applications in Plasma Display Panels.

This device utilizes advanced TM rating per silicon area which improve panel trench IGBT technology to achieve low CE(on) V and low E PULSE efficiency.

Key Features

  • l Advanced Trench IGBT Technology l Optimized for Sustain and Energy Recovery circuits in PDP.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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PD - 97562 PDP TRENCH IGBT Features l Advanced Trench IGBT Technology l Optimized for Sustain and Energy Recovery circuits in PDP applications TM) l Low VCE(on) and Energy per Pulse (E PULSE for improved panel efficiency l High repetitive peak current capability l Lead Free package IRG7IC28UPbF Key Parameters 600 1.70 225 150 V V A °C VCE min VCE(ON) typ. @ IC = 40A IRP max @ TC= 25°C TJ max c C G E E C G n-channel G Gate C Collector TO-220AB Full-Pak E Emitter Description This IGBT is specifically designed for applications in Plasma Display Panels. This device utilizes advanced TM rating per silicon area which improve panel trench IGBT technology to achieve low CE(on) V and low E PULSE efficiency.