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IRG8P25N120KD-EPbF - INSULATED GATE BIPOLAR TRANSISTOR

This page provides the datasheet information for the IRG8P25N120KD-EPbF, a member of the IRG8P25N120KDPbF INSULATED GATE BIPOLAR TRANSISTOR family.

Features

  • Benchmark Low VCE(ON) 10μs Short Circuit SOA Positive VCE(ON) Temperature Coefficient Square RBSOA and high ILM- rating Lead-Free, RoHS compliant Benefits  High Efficiency in a Motor Drive.

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Full PDF Text Transcription

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  IRG8P25N120KDPbF IRG8P25N120KD-EPbF VCES = 1200V IC = 25A, TC =100°C Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode  C   tSC 10µs, TJ(max) = 150°C VCE(ON) typ. = 1.
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