IRGB10B60KD - INSULATED GATE BIPOLAR TRANSISTOR

Name: IRGB10B60KD
SKU: IRGB10B60KD-585028

International Rectifier

The IRGB10B60KD by International Rectifier is a INSULATED GATE BIPOLAR TRANSISTOR. Below is the official datasheet preview.

Datasheet Details

Part number	IRGB10B60KD
Manufacturer	International Rectifier
File Size	327.20 KB
Description	INSULATED GATE BIPOLAR TRANSISTOR
Datasheet	IRGB10B60KD_InternationalRectifier.pdf
Additional preview pages of the IRGB10B60KD datasheet.

Low VCE (on) Non Punch Through IGBT Technology.
Low Diode VF.
10µs Short Circuit Capability.
Square RBSOA.
Ultrasoft Diode Reverse Recovery Characteristics.
Positive VCE (on) Temperature Coefficient. G E tsc > 10µs, TJ=150°C Benefits.
Benchmark Efficiency for Motor Control.
Rugged Transient Performance.
Low EMI.
Excellent Current Sharing in Parallel Operation. n-channel VCE(on) typ. = 1.8V TO.

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Published: May 30, 2007 |