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IRGB15B60KDPbF - INSULATED GATE BIPOLAR TRANSISTOR

International Rectifier (now Infineon)

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IRGB15B60KDPbF insulated gate bipolar transistor by International Rectifier (now Infineon) - Datasheet Preview

Datasheet Details

Part number	IRGB15B60KDPbF
Manufacturer	International Rectifier (now Infineon)
File Size	824.04 KB
Description	INSULATED GATE BIPOLAR TRANSISTOR
Datasheet	IRGB15B60KDPbF Datasheet

Overview

PD - 95194A INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY.

Key Features

Low VCE (on) Non Punch Through IGBT Technology.
Low Diode VF.
10µs Short Circuit Capability.
Square RBSOA.
Ultrasoft Diode Reverse Recovery Characteristics.
Positive VCE (on) Temperature Coefficient.
Lead-Free C IRGB15B60KDPbF IRGS15B60KDPbF IRGSL15B60KDPbF VCES = 600V IC = 15A, TC=100°C G E tsc > 10µs, TJ=150°C n-channel VCE(on) typ. = 1.8V Benefits.
Benchmark Efficiency for Motor Control.
Rugged Tran.

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