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IRGB30B60KPBF Datasheet INSULATED GATE BIPOLAR TRANSISTOR

Manufacturer: International Rectifier (now Infineon)

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IRGB30B60KPBF insulated gate bipolar transistor by International Rectifier (now Infineon) - Datasheet Preview

Datasheet Details

Part number	IRGB30B60KPBF
Manufacturer	International Rectifier (now Infineon)
File Size	349.14 KB
Description	INSULATED GATE BIPOLAR TRANSISTOR
Download	IRGB30B60KPBF Download (PDF)

Overview

PD - 95356 INSULATED GATE BIPOLAR TRANSISTOR C IRGB30B60KPbF IRGS30B60K IRGSL30B60K VCES = 600V IC = 50A, TC=100°C at.

Key Features

Low VCE (on) Non Punch Through IGBT Technology. 10µs Short Circuit Capability. Square RBSOA. Positive VCE (on) Temperature Coefficient. Maximum Junction Temperature rated at 175°C. TO-220 is available in PbF as Lead-Free G E tsc > 10µs, TJ=150°C n-channel VCE(on) typ. = 1.95V Benefits.
Benchmark Efficiency for Motor Control.
Rugged Transient Performance.
Low EMI.
Excellent Current Sharing in Pa.

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