IRGB420 - INSULATED GATE BIPOLAR TRANSISTOR

International Rectifier

IRGB420 Datasheet Preview — Preview of IRGB420 PDF

Datasheet Details

Part number	IRGB420
Manufacturer	International Rectifier ↗
File Size	164.19 KB
Description	INSULATED GATE BIPOLAR TRANSISTOR
Datasheet	IRGB420-InternationalRectifier.pdf

IRGB420 Product details

Description

Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have higher usable current densities than comparable bipolar transistors, while at the same time having simpler gate-drive requirements of the familiar power MOSFET.

Features

Switching-loss rating includes all "tail" losses.
Optimized for high operating frequency (over 5kHz) See Fig. 1 for Current vs. Frequency curve G E C UltraFast IGBT VCES = 500V VCE(sat) ≤ 3.0V @VGE = 15V, I C = 7.5A n-channel.

📁 IRGB420 Similar Datasheet

IRGB4620DPbF - IGBT (Infineon)
IRGB4630DPbF - IGBT (Infineon)
IRGB4640DPbF - Insulated Gate Bipolar Transistor (Infineon)
IRG4BC20F - INSULATED GATE BIPOLAR TRANSISTOR (IRF)
IRG4BC20FD - INSULATED GATE BIPOLAR TRANSISTOR (IRF)
IRG4BC20FD-S - INSULATED GATE BIPOLAR TRANSISTOR (IRF)
IRG4BC20K - INSULATED GATE BIPOLAR TRANSISTOR (IRF)
IRG4BC20K-S - INSULATED GATE BIPOLAR TRANSISTOR (IRF)

Other Datasheets by International Rectifier

IRGB420U - INSULATED GATE BIPOLAR TRANSISTOR
IRGB420UD2 - INSULATED GATE BIPOLAR TRANSISTOR
IRGB4045DPbF - INSULATED GATE BIPOLAR TRANSISTOR
IRGB4055PBF - PDP TRENCH IGBT
IRGB4056DPBF - INSULATED GATE BIPOLAR TRANSISTOR
IRGB4059DPbF - INSULATED GATE BIPOLAR TRANSISTOR

Published: Aug 30, 2014 |