IRGB4045DPbF
IRGB4045DPbF is INSULATED GATE BIPOLAR TRANSISTOR manufactured by International Rectifier.
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
Features
- Low VCE (on) Trench IGBT Technology
- Low Switching Losses
- Maximum Junction temperature 175 °C
- 5µs SCSOA
- Square RBSOA
- 100% of the parts tested for ILM
- Positive VCE (on) Temperature Coefficient.
- Ultra Fast Soft Recovery Co-pak Diode
- Tighter Distribution of Parameters
- Lead-Free Package
Benefits
- High Efficiency in a Wide Range of Applications
- Suitable for a Wide Range of Switching Frequencies due to Low VCE (ON) and Low Switching Losses
- Rugged Transient Performance for Increased Reliability
- Excellent Current Sharing in Parallel Operation
- Low EMI
- 97269A
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