IRGB4045DPbF Description
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE.
IRGB4045DPbF Key Features
- Low VCE (on) Trench IGBT Technology
- Low Switching Losses
- Maximum Junction temperature 175 °C
- 5µs SCSOA
- Square RBSOA
- 100% of the parts tested for ILM
- Positive VCE (on) Temperature Coefficient
- Ultra Fast Soft Recovery Co-pak Diode
- Tighter Distribution of Parameters
- Lead-Free Package
IRGB4045DPbF Applications
- Suitable for a Wide Range of Switching Frequencies due
- Rugged Transient Performance for Increased Reliability
- Excellent Current Sharing in Parallel Operation