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IRGB4045DPbF - INSULATED GATE BIPOLAR TRANSISTOR

Key Features

  • Low VCE (on) Trench IGBT Technology.
  • Low Switching Losses.
  • Maximum Junction temperature 175 °C.
  • 5µs SCSOA.
  • Square RBSOA.
  • 100% of the parts tested for ILM.
  • Positive VCE (on) Temperature Coefficient.
  • Ultra Fast Soft Recovery Co-pak Diode.
  • Tighter Distribution of Parameters.
  • Lead-Free Package Benefits.
  • High Efficiency in a Wide Range of.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • Low VCE (on) Trench IGBT Technology • Low Switching Losses • Maximum Junction temperature 175 °C • 5µs SCSOA • Square RBSOA • 100% of the parts tested for ILM • Positive VCE (on) Temperature Coefficient. • Ultra Fast Soft Recovery Co-pak Diode • Tighter Distribution of Parameters • Lead-Free Package Benefits • High Efficiency in a Wide Range of Applications • Suitable for a Wide Range of Switching Frequencies due to Low VCE (ON) and Low Switching Losses • Rugged Transient Performance for Increased Reliability • Excellent Current Sharing in Parallel Operation • Low EMI PD - 97269A IRGB4045DPbF C G E n-channel C VCES = 600V IC = 6.0A, TC = 100°C tsc > 5µs, Tjmax = 175°C VCE(on) typ. = 1.