IRGB4059DPbF Overview
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE.
IRGB4059DPbF Key Features
- Low VCE (on) Trench IGBT Technology
- Low Switching Losses
- Maximum Junction temperature 175 °C
- 5µs SCSOA
- Square RBSOA
- 100% of The Parts Tested for 4X Rated Current (ILM)
- Positive VCE (on) Temperature Coefficient
- Ultra Fast Soft Recovery Co-pak Diode
- Tighter Distribution of Parameters
- Lead-Free Package Benefits
IRGB4059DPbF Applications
- Suitable for a Wide Range of Switching Frequencies due
- Rugged Transient Performance for Increased Reliability
- Excellent Current Sharing in Parallel Operation