IRGB420U - INSULATED GATE BIPOLAR TRANSISTOR

International Rectifier

IRGB420U Datasheet Preview — Preview of IRGB420U PDF

Datasheet Details

Part number	IRGB420U
Manufacturer	International Rectifier ↗
File Size	164.19 KB
Description	INSULATED GATE BIPOLAR TRANSISTOR
Datasheet	IRGB420U-InternationalRectifier.pdf

IRGB420U Product details

Description

Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have higher usable current densities than comparable bipolar transistors, while at the same time having simpler gate-drive requirements of the familiar power MOSFET.

Features

Switching-loss rating includes all "tail" losses.
Optimized for high operating frequency (over 5kHz) See Fig. 1 for Current vs. Frequency curve G E C UltraFast IGBT VCES = 500V VCE(sat) ≤ 3.0V @VGE = 15V, I C = 7.5A n-channel.

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Published: Aug 30, 2014 |