* Low VCE(ON) and switching losses Square RBSOA and maximum junction temperature 175°C Positive VCE(ON) temperature coefficient and tighter distribution of parameters 5μs short circuit SOA Lead-free, RoHS compliant G ate C ollector Em itter → Benefits High efficiency in a wide range of applicatio
IRGB4610DPBF Datasheet (418.33 KB)
IRGB4610DPBF
International Rectifier
418.33 KB
Insulated gate bipolar transistor.
IRGR4610DPbF IRGS4610DPbF IRGB4610DPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 600V IC = 10A, TC = 100°C tsc > 5µs.
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