IRGB4610DPBF Features
* Low VCE(ON) and switching losses Square RBSOA and maximum junction temperature 175°C Positive VCE(ON) temperature coefficient and tighter distribution of parameters 5μs short circuit SOA Lead-free, RoHS compliant G ate C ollector Em itter → Benefits High efficiency in a wide range of applicatio
IRGB4610DPBF, IRGR4610DPBF Datasheet
Datasheet Details
IRGB4610DPBF, IRGR4610DPBF
International Rectifier
418.33 KB
Insulated gate bipolar transistor.
This datasheet PDF includes multiple part numbers: IRGB4610DPBF, IRGR4610DPBF.
Please refer to the document for exact specifications by model.
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IRGB4610DPBF Distributor
