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IRGB4607DPbF - Insulated Gate Bipolar Transistor

This page provides the datasheet information for the IRGB4607DPbF, a member of the IRGS4607DPBF Insulated Gate Bipolar Transistor family.

Product Overview

International Rectifier

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IRGB4607DPbF Insulated Gate Bipolar Transistor by International Rectifier - Datasheet Preview — Datasheet preview – IRGB4607DPbF

Datasheet Details

Part number	IRGB4607DPbF
Manufacturer	International Rectifier
File Size	821.57 KB
Description	Insulated Gate Bipolar Transistor
Datasheet	IRGB4607DPbF Datasheet
Additional preview pages of the IRGB4607DPbF datasheet.

IRGB4607DPbF Product details

Features

Low VCE(ON) and Switching Losses 5µs Short Circuit SOA Square RBSOA Maximum Junction Temperature 175°C Positive VCE (ON) Temperature Coefficient G Gate C Collector E Emitter  Benefits High Efficiency in a Wide Range of.

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Published: Feb 16, 2016 |