IRGB4607DPbF - Insulated Gate Bipolar Transistor

International Rectifier (now Infineon)

Download the IRGB4607DPbF datasheet PDF. This datasheet also covers the IRGS4607DPBF variant, as both devices belong to the same insulated gate bipolar transistor family and are provided as variant models within a single manufacturer datasheet.

Key Features

Low VCE(ON) and Switching Losses 5µs Short Circuit SOA Square RBSOA Maximum Junction Temperature 175°C Positive VCE (ON) Temperature Coefficient G Gate C Collector E Emitter  Benefits High Efficiency in a Wide Range of.

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IRGB4607DPbF insulated gate bipolar transistor by International Rectifier (now Infineon) - Datasheet Preview — Note: The manufacturer provides a single datasheet file (IRGS4607DPBF-InternationalRectifier.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number	IRGB4607DPbF
Manufacturer	International Rectifier (now Infineon)
File Size	821.57 KB
Description	Insulated Gate Bipolar Transistor
Datasheet	IRGB4607DPbF Datasheet

📁 Similar Datasheet

Part Number	Description	Manufacturer
IRGB4620DPbF	IGBT	Infineon
IRGB4630DPbF	IGBT	Infineon
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IRG4BC20F	INSULATED GATE BIPOLAR TRANSISTOR	IRF
IRG4BC20FD	INSULATED GATE BIPOLAR TRANSISTOR	IRF

Other Datasheets by International Rectifier (now Infineon)

Part Number	Description
IRGB4610DPBF	INSULATED GATE BIPOLAR TRANSISTOR
IRGB4615DPBF	Power MOSFET
IRGB4620DPBF	Power MOSFET
IRGB4630DPbF	Insulated Gate Bipolar Transistor
IRGB4045DPbF	INSULATED GATE BIPOLAR TRANSISTOR

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text

VCES = 600V IC = 7.0A, TC =100°C tSC 5µs, TJ(max) = 175°C VCE(ON) typ. = 1.75V @ IC = 4.