IRGB5B120KD transistor equivalent, insulated gate bipolar transistor.
* Low VCE (on) Non Punch Through IGBT Technology.
* Low Diode VF.
* 10µs Short Circuit Capability.
* Square RBSOA. www.DataSheet4U.com
* Ultrasoft Dio.
T
0
VCC
80 V Rg
DUT
1000V
1K
www.DataSheet4U.com
Fig.C.T.1 - Gate Charge Circuit (turn-off)
Fig.C.T.2 - RBSOA Circ.
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