Datasheet4U Logo Datasheet4U.com

IRGB8B60K Datasheet - International Rectifier

IRGB8B60K INSULATED GATE BIPOLAR TRANSISTOR

IRGB8B60K Features

* Low VCE (on) Non Punch Through IGBT Technology. 10µs Short Circuit Capability. Square RBSOA. Positive VCE (on) Temperature Coefficient. C IRGB8B60K IRGS8B60K IRGSL8B60K VCES = 600V IC = 20A, TC=100°C G E tsc>10µs, TJ=150°C Benefits

* Benchmark Effic

IRGB8B60K_InternationalRectifier.pdf

Preview of IRGB8B60K PDF
IRGB8B60K Datasheet Preview Page 2 IRGB8B60K Datasheet Preview Page 3

Datasheet Details

Part number:

IRGB8B60K

Manufacturer:

International Rectifier

File Size:

472.11 KB

Description:

Insulated gate bipolar transistor.

IRGB8B60K Distributor

📁 Related Datasheet

IRGB8B60KPbF INSULATED GATE BIPOLAR TRANSISTOR (International Rectifier)

IRGB10B60KD INSULATED GATE BIPOLAR TRANSISTOR (International Rectifier)

IRGB10B60KDPBF INSULATED GATE BIPOLAR TRANSISTOR (International Rectifier)

IRGB14C40L INSULATED GATE BIPOLAR TRANSISTOR (International Rectifier)

IRGB14C40LPBF IGBT (International Rectifier)

IRGB15B60KD INSULATED GATE BIPOLAR TRANSISTOR (International Rectifier)

IRGB15B60KDPbF INSULATED GATE BIPOLAR TRANSISTOR (International Rectifier)

IRGB20B60PD1 SMPS IGBT (International Rectifier)

TAGS

IRGB8B60K IRGB8B60K INSULATED GATE BIPOLAR TRANSISTOR International Rectifier