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IRGBC20KD2 - INSULATED GATE BIPOLAR TRANSISTOR

General Description

Co-packaged IGBTs are a natural extension of International Rectifier's well known IGBT line.

They provide the convenience of an IGBT and an ultrafast recovery diode in one package, resulting in substantial benefits to a host of high-voltage, high-current, applications.

Key Features

  • Short circuit rated -10µs @125°C, V GE = 15V.
  • Switching-loss rating includes all "tail" losses TM.

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Full PDF Text Transcription for IRGBC20KD2 (Reference)

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PD - 9.1105 IRGBC20KD2 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • Short circuit rated -10µs @125°C, V GE = 15V • Switching-loss ratin...

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• Short circuit rated -10µs @125°C, V GE = 15V • Switching-loss rating includes all "tail" losses TM • HEXFRED soft ultrafast diodes • Optimized for high operating frequency (over 5kHz) See Fig. 1 for Current vs. Frequency curve C Short Circuit Rated UltraFast CoPack IGBT VCES = 600V VCE(sat) ≤ 3.5V G @VGE = 15V, IC = 6.0A E n-channel Description Co-packaged IGBTs are a natural extension of International Rectifier's well known IGBT line. They provide the convenience of an IGBT and an ultrafast recovery diode in one package, resulting in substantial benefits to a host of high-voltage, high-current, applications.