Datasheet Details
| Part number | IRGBC20KD2 |
|---|---|
| Manufacturer | International Rectifier (now Infineon) |
| File Size | 288.91 KB |
| Description | INSULATED GATE BIPOLAR TRANSISTOR |
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Co-packaged IGBTs are a natural extension of International Rectifier's well known IGBT line.
They provide the convenience of an IGBT and an ultrafast recovery diode in one package, resulting in substantial benefits to a host of high-voltage, high-current, applications.
| Part number | IRGBC20KD2 |
|---|---|
| Manufacturer | International Rectifier (now Infineon) |
| File Size | 288.91 KB |
| Description | INSULATED GATE BIPOLAR TRANSISTOR |
| Datasheet |
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| Part Number | Description |
|---|---|
| IRGBC20KD2-S | INSULATED GATE BIPOLAR TRANSISTOR |
| IRGBC20K-S | INSULATED GATE BIPOLAR TRANSISTOR |
| IRGBC20F | INSULATED GATE BIPOLAR TRANSISTOR |
| IRGBC20M | INSULATED GATE BIPOLAR TRANSISTOR |
| IRGBC20S | INSULATED GATE BIPOLAR TRANSISTOR |
| IRGBC20SD2 | INSULATED GATE BIPOLAR TRANSISTOR |
| IRGBC20U | INSULATED GATE BIPOLAR TRANSISTOR |
| IRGBC20UD2 | INSULATED GATE BIPOLAR TRANSISTOR |
| IRGBC30F | INSULATED GATE BIPOLAR TRANSISTOR |
| IRGBC30FD2 | INSULATED GATE BIPOLAR TRANSISTOR |
Note: Below is a high-fidelity text extraction (approx. 800 characters) for IRGBC20KD2. For precise diagrams, tables, and layout, please refer to the original PDF.
PD - 9.1105 IRGBC20KD2 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • Short circuit rated -10µs @125°C, V GE = 15V • Switching-loss ratin...