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IRGBC20S - INSULATED GATE BIPOLAR TRANSISTOR

General Description

Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have higher usable current densities than comparable bipolar transistors, while at the same time having simpler gate-drive requirements of the familiar power MOSFET.

Key Features

  • Switching-loss rating includes all "tail" losses.
  • Optimized for line frequency operation ( to 400 Hz) See Fig. 1 for Current vs. Frequency curve G E C Standard Speed IGBT VCES = 600V VCE(sat) ≤ 2.4V @VGE = 15V, I C = 10A n-channel.

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More Datasheets from International Rectifier (now Infineon)

Part Number Description
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Full PDF Text Transcription for IRGBC20S (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for IRGBC20S. For precise diagrams, tables, and layout, please refer to the original PDF.

PD - 9.687A IRGBC20S INSULATED GATE BIPOLAR TRANSISTOR Features • Switching-loss rating includes all "tail" losses • Optimized for line frequency operation ( to 400 Hz) S...

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"tail" losses • Optimized for line frequency operation ( to 400 Hz) See Fig. 1 for Current vs. Frequency curve G E C Standard Speed IGBT VCES = 600V VCE(sat) ≤ 2.4V @VGE = 15V, I C = 10A n-channel Description Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have higher usable current densities than comparable bipolar transistors, while at the same time having simpler gate-drive requirements of the familiar power MOSFET. They provide substantial benefits to a host of high-voltage, highcurrent applications.