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IRGBC20SD2 Datasheet, International Rectifier

IRGBC20SD2 transistor equivalent, insulated gate bipolar transistor.

IRGBC20SD2 Avg. rating / M : 1.0 rating-11

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IRGBC20SD2 Datasheet

Features and benefits


* Switching-loss rating includes all 'tail' losses
* HEXFREDTM soft ultrafast diodes
* Optimized for line frequency operation (to 400HZ) VCES = 600V G E VCE.

Application

n - ch a n n e l TO-220AB Absolute Maximum Ratings Parameter VCES I C @ TC = 25°C I C @ TC = 100°C I CM I LM I F @ TC.

Description

Co-packaged IGBTs are a natural extension of International Rectifier's well-known IGBT line. They provide the convenience of an IBGT and an ultrafast recovery diode in one package, resulting in substantial benefits to a host of high-voltage, highcurr.

Image gallery

IRGBC20SD2 Page 1 IRGBC20SD2 Page 2 IRGBC20SD2 Page 3

TAGS

IRGBC20SD2
INSULATED
GATE
BIPOLAR
TRANSISTOR
International Rectifier

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