Datasheet4U Logo Datasheet4U.com

IRGBC20U - INSULATED GATE BIPOLAR TRANSISTOR

General Description

Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have higher usable current densities than comparable bipolar transistors, while at the same time having simpler gate-drive requirements of the familiar power MOSFET.

Key Features

  • Switching-loss rating includes all "tail" losses.
  • Optimized for high operating frequency (over 5kHz) See Fig. 1 for Current vs. Frequency curve G E C UltraFast IGBT VCES = 600V VCE(sat) ≤ 3.0V @VGE = 15V, I C = 6.5A n-channel.

📥 Download Datasheet

More Datasheets from International Rectifier (now Infineon)

Part Number Description
IRGBC20UD2 INSULATED GATE BIPOLAR TRANSISTOR
IRGBC20F INSULATED GATE BIPOLAR TRANSISTOR
IRGBC20K-S INSULATED GATE BIPOLAR TRANSISTOR
IRGBC20KD2 INSULATED GATE BIPOLAR TRANSISTOR
IRGBC20KD2-S INSULATED GATE BIPOLAR TRANSISTOR
IRGBC20M INSULATED GATE BIPOLAR TRANSISTOR
IRGBC20S INSULATED GATE BIPOLAR TRANSISTOR
IRGBC20SD2 INSULATED GATE BIPOLAR TRANSISTOR
IRGBC30F INSULATED GATE BIPOLAR TRANSISTOR
IRGBC30FD2 INSULATED GATE BIPOLAR TRANSISTOR

Full PDF Text Transcription for IRGBC20U (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for IRGBC20U. For precise diagrams, tables, and layout, please refer to the original PDF.

PD - 9.681A IRGBC20U INSULATED GATE BIPOLAR TRANSISTOR Features • Switching-loss rating includes all "tail" losses • Optimized for high operating frequency (over 5kHz) Se...

View more extracted text
"tail" losses • Optimized for high operating frequency (over 5kHz) See Fig. 1 for Current vs. Frequency curve G E C UltraFast IGBT VCES = 600V VCE(sat) ≤ 3.0V @VGE = 15V, I C = 6.5A n-channel Description Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have higher usable current densities than comparable bipolar transistors, while at the same time having simpler gate-drive requirements of the familiar power MOSFET. They provide substantial benefits to a host of high-voltage, highcurrent applications.