* Switching-loss rating includes all "tail" losses
* Optimized for high operating frequency (over 5kHz) See Fig. 1 for Current vs. Frequency curve G E C UltraFas.

TO-220AB Absolute Maximum Ratings Parameter VCES IC @ T C = 25°C IC @ T C = 100°C ICM ILM VGE EARV PD @ T C = 25°C PD .

Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have higher usable current densities than comparable bipolar transistors, while at the same time having simpler gate-drive requirements of the familiar power MOSFET. They provide.

IRGBC20F

IRGBC20K-S

IRGBC20KD2

IRGBC20KD2-S

IRGBC20M

IRGBC20S

IRGBC20SD2

IRGBC20UD2

IRGBC30F

IRGBC30FD2

IRGBC30K

IRGBC30K-S

IRGBC30KD2

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