IRGBC30K - INSULATED GATE BIPOLAR TRANSISTOR

Product Overview

International Rectifier

Datasheet Details

Part number	IRGBC30K
Manufacturer	International Rectifier
File Size	114.90 KB
Description	INSULATED GATE BIPOLAR TRANSISTOR
Datasheet	IRGBC30K Datasheet
Additional preview pages of the IRGBC30K datasheet.

Product details

Description

Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have higher usable current densities than comparable bipolar transistors, while at the same time having simpler gate-drive requirements of the familiar power MOSFET.

Features

Short circuit rated - 10µs @ 125°C, V GE = 15V.
Switching-loss rating includes all "tail" losses.
Optimized for high operating frequency (over 5kHz) See Fig. 1 for Current vs. Frequency curve G E C Short Circuit Rated UltraFast IGBT VCES = 600V VCE(sat) ≤ 3.8V @VGE = 15V, I C = 14A n-channel.

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Published: Jun 5, 2007 |