Datasheet4U Logo Datasheet4U.com

IRGBC30KD2 - INSULATED GATE BIPOLAR TRANSISTOR

Description

Co-packaged IGBTs are a natural extension of International Rectifier's well known IGBT line.

They provide the convenience of an IGBT and an ultrafast recovery diode in one package, resulting in substantial benefits to a host of high-voltage, high-current, applications.

Features

  • Short circuit rated -10µs @125°C, VGE = 15V.
  • Switching-loss rating includes all "tail" losses.

📥 Download Datasheet

Datasheet preview – IRGBC30KD2

📁 Similar Datasheet

Other Datasheets by International Rectifier

Full PDF Text Transcription

Click to expand full text
PD - 9.1107 IRGBC30KD2 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • Short circuit rated -10µs @125°C, VGE = 15V • Switching-loss rating includes all "tail" losses • HEXFREDTM soft ultrafast diodes • Optimized for high operating frequency (over 5kHz) See Fig. 1 for Current vs. Frequency curve C Short Circuit Rated UltraFast CoPack IGBT VCES = 600V VCE(sat) ≤ 3.8V G @VGE = 15V, IC = 14A E n-channel Description Co-packaged IGBTs are a natural extension of International Rectifier's well known IGBT line. They provide the convenience of an IGBT and an ultrafast recovery diode in one package, resulting in substantial benefits to a host of high-voltage, high-current, applications.
Published: |