IRGBC30K Datasheet INSULATED GATE BIPOLAR TRANSISTOR

Manufacturer: International Rectifier (now Infineon)

Overview: PD - 9.1071 IRGBC30K INSULATED GATE BIPOLAR TRANSISTOR.

IRGBC30K insulated gate bipolar transistor by International Rectifier (now Infineon) - Datasheet Preview

Datasheet Details

Part number	IRGBC30K
Manufacturer	International Rectifier (now Infineon)
File Size	114.90 KB
Description	INSULATED GATE BIPOLAR TRANSISTOR
Download	IRGBC30K Download (PDF)

General Description

Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have higher usable current densities than comparable bipolar transistors, while at the same time having simpler gate-drive requirements of the familiar power MOSFET.

They provide substantial benefits to a host of high-voltage, highcurrent applications.

These new short circuit rated devices are especially suited for motor control and other applications requiring short circuit withstand capability.

Key Features

Short circuit rated - 10µs @ 125°C, V GE = 15V.
Switching-loss rating includes all "tail" losses.
Optimized for high operating frequency (over 5kHz) See Fig. 1 for Current vs. Frequency curve G E C Short Circuit Rated UltraFast IGBT VCES = 600V VCE(sat) ≤ 3.8V @VGE = 15V, I C = 14A n-channel.

More Datasheets from International Rectifier (now Infineon)

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IRGBC30S	INSULATED GATE BIPOLAR TRANSISTOR
IRGBC30U	INSULATED GATE BIPOLAR TRANSISTOR