Datasheet4U Logo Datasheet4U.com
International Rectifier (now Infineon) logo

IRGBC30K

Manufacturer: International Rectifier (now Infineon)
IRGBC30K datasheet preview

Datasheet Details

Part number IRGBC30K
Datasheet IRGBC30K_InternationalRectifier.pdf
File Size 114.90 KB
Manufacturer International Rectifier (now Infineon)
Description INSULATED GATE BIPOLAR TRANSISTOR
IRGBC30K page 2 IRGBC30K page 3

IRGBC30K Overview

Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have higher usable current densities than parable bipolar transistors, while at the same time having simpler gate-drive requirements of the familiar power MOSFET. They provide substantial benefits to a host of high-voltage, highcurrent applications. These new short circuit rated devices are especially suited for motor control and other...

IRGBC30K Key Features

  • Short circuit rated
  • 10µs @ 125°C, V GE = 15V
  • Switching-loss rating includes all "tail" losses
  • Optimized for high operating frequency (over 5kHz) See Fig. 1 for Current vs. Frequency curve
International Rectifier (now Infineon) logo - Manufacturer

More Datasheets from International Rectifier (now Infineon)

See all International Rectifier (now Infineon) datasheets

Part Number Description
IRGBC30K-S INSULATED GATE BIPOLAR TRANSISTOR
IRGBC30KD2 INSULATED GATE BIPOLAR TRANSISTOR
IRGBC30F INSULATED GATE BIPOLAR TRANSISTOR
IRGBC30FD2 INSULATED GATE BIPOLAR TRANSISTOR
IRGBC30M INSULATED GATE BIPOLAR TRANSISTOR
IRGBC30M-S INSULATED GATE BIPOLAR TRANSISTOR
IRGBC30MD2 INSULATED GATE BIPOLAR TRANSISTOR
IRGBC30MD2-S INSULATED GATE BIPOLAR TRANSISTOR
IRGBC30S INSULATED GATE BIPOLAR TRANSISTOR
IRGBC30U INSULATED GATE BIPOLAR TRANSISTOR

IRGBC30K Distributor

Datasheet4U Logo
Since 2006. D4U Semicon. About Datasheet4U Contact Us Privacy Policy Purchase of parts