IRGBC30KD2 Key Features
- Short circuit rated -10µs @125°C, VGE = 15V
- Switching-loss rating includes all "tail" losses
- HEXFREDTM soft ultrafast diodes
- Optimized for high operating frequency (over 5kHz) See Fig. 1 for Current vs. Frequency curve
IRGBC30KD2 is INSULATED GATE BIPOLAR TRANSISTOR manufactured by International Rectifier.
| Part Number | Description |
|---|---|
| IRGBC30K | INSULATED GATE BIPOLAR TRANSISTOR |
| IRGBC30K-S | INSULATED GATE BIPOLAR TRANSISTOR |
| IRGBC30F | INSULATED GATE BIPOLAR TRANSISTOR |
| IRGBC30FD2 | INSULATED GATE BIPOLAR TRANSISTOR |
| IRGBC30M | INSULATED GATE BIPOLAR TRANSISTOR |