IRGBC30M-S Key Features
- Short circuit rated
- 10µs @ 125°C, V GE = 15V
- Switching-loss rating includes all "tail" losses
- Optimized for medium operating frequency (1 to 10kHz) See Fig. 1 for Current vs. Frequency curve
IRGBC30M-S is INSULATED GATE BIPOLAR TRANSISTOR manufactured by International Rectifier.
| Part Number | Description |
|---|---|
| IRGBC30M | INSULATED GATE BIPOLAR TRANSISTOR |
| IRGBC30MD2 | INSULATED GATE BIPOLAR TRANSISTOR |
| IRGBC30MD2-S | INSULATED GATE BIPOLAR TRANSISTOR |
| IRGBC30F | INSULATED GATE BIPOLAR TRANSISTOR |
| IRGBC30FD2 | INSULATED GATE BIPOLAR TRANSISTOR |