IRGBC30M-S Datasheet INSULATED GATE BIPOLAR TRANSISTOR

Manufacturer: International Rectifier (now Infineon)

IRGBC30M-S insulated gate bipolar transistor by International Rectifier (now Infineon) - Datasheet Preview

Datasheet Details

Part number	IRGBC30M-S
Manufacturer	International Rectifier (now Infineon)
File Size	187.03 KB
Description	INSULATED GATE BIPOLAR TRANSISTOR
Download	IRGBC30M-S Download (PDF)

General Description

Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have higher usable current densities than comparable bipolar transistors, while at the same time having simpler gate-drive requirements of the familiar power MOSFET.

They provide substantial benefits to a host of high-voltage, highcurrent applications.

These new short circuit rated devices are especially suited for motor control and other applications requiring short circuit withstand capability.

Overview

Previous Datasheet Index Next Data Sheet PD - 9.1133 IRGBC30M-S INSULATED GATE BIPOLAR.

Key Features

Short circuit rated - 10µs @ 125°C, V GE = 15V.
Switching-loss rating includes all "tail" losses.
Optimized for medium operating frequency (1 to 10kHz) See Fig. 1 for Current vs. Frequency curve G E C Short Circuit Rated Fast IGBT VCES = 600V VCE(sat) ≤ 2.9V @VGE = 15V, I C = 16A n-channel.

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