IRGBC30MD2 Key Features
- Short circuit rated -10µs @125°C, V GE = 15V
- Switching-loss rating includes all "tail" losses TM
- HEXFRED soft ultrafast diodes
- Optimized for medium operating frequency (1 to 10kHz) See Fig. 1 for Current vs. Frequency curve
- Part: IRGBC30MD2
- Description: INSULATED GATE BIPOLAR TRANSISTOR
- Manufacturer: International Rectifier
- Size: 307.14 KB
Related International Rectifier Datasheets
| Part Number | Description |
|---|---|
| IRGBC30MD2-S | INSULATED GATE BIPOLAR TRANSISTOR |
| IRGBC30M | INSULATED GATE BIPOLAR TRANSISTOR |
| IRGBC30M-S | INSULATED GATE BIPOLAR TRANSISTOR |
| IRGBC30F | INSULATED GATE BIPOLAR TRANSISTOR |
| IRGBC30FD2 | INSULATED GATE BIPOLAR TRANSISTOR |