Datasheet Details
| Part number | IRGBC30U |
|---|---|
| Manufacturer | International Rectifier (now Infineon) |
| File Size | 112.60 KB |
| Description | INSULATED GATE BIPOLAR TRANSISTOR |
| Download | IRGBC30U Download (PDF) |
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| Part number | IRGBC30U |
|---|---|
| Manufacturer | International Rectifier (now Infineon) |
| File Size | 112.60 KB |
| Description | INSULATED GATE BIPOLAR TRANSISTOR |
| Download | IRGBC30U Download (PDF) |
|
|
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Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have higher usable current densities than comparable bipolar transistors, while at the same time having simpler gate-drive requirements of the familiar power MOSFET.
They provide substantial benefits to a host of high-voltage, highcurrent applications.
www.DataSheet4U.com TO-220AB Absolute Maximum Ratings Parameter VCES IC @ T C = 25°C IC @ T C = 100°C ICM ILM VGE EARV PD @ T C = 25°C PD @ T C = 100°C TJ TSTG Collector-to-Emitter Voltage Continuous Collector Current Continuous Collector Current Pulsed Collector Current Clamped Inductive Load Current Gate-to-Emitter Voltage Reverse Voltage Avalanche Energy Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Temperature, for 10 sec.
PD - 9.682A IRGBC30U INSULATED GATE BIPOLAR TRANSISTOR.
| Part Number | Description |
|---|---|
| IRGBC30UD2 | INSULATED GATE BIPOLAR TRANSISTOR |
| IRGBC30F | INSULATED GATE BIPOLAR TRANSISTOR |
| IRGBC30FD2 | INSULATED GATE BIPOLAR TRANSISTOR |
| IRGBC30K | INSULATED GATE BIPOLAR TRANSISTOR |
| IRGBC30K-S | INSULATED GATE BIPOLAR TRANSISTOR |
| IRGBC30KD2 | INSULATED GATE BIPOLAR TRANSISTOR |
| IRGBC30M | INSULATED GATE BIPOLAR TRANSISTOR |
| IRGBC30M-S | INSULATED GATE BIPOLAR TRANSISTOR |
| IRGBC30MD2 | INSULATED GATE BIPOLAR TRANSISTOR |
| IRGBC30MD2-S | INSULATED GATE BIPOLAR TRANSISTOR |