IRGBC40M - INSULATED GATE BIPOLAR TRANSISTOR

International Rectifier

The IRGBC40M by International Rectifier is a INSULATED GATE BIPOLAR TRANSISTOR. Below is the official datasheet preview.

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IRGBC40M INSULATED GATE BIPOLAR TRANSISTOR by International Rectifier - Datasheet Preview — Official preview page of the **IRGBC40M** INSULATED GATE BIPOLAR TRANSISTOR datasheet (International Rectifier).

Datasheet Details

Part number	IRGBC40M
Manufacturer	International Rectifier
File Size	58.58 KB
Description	INSULATED GATE BIPOLAR TRANSISTOR
Datasheet	IRGBC40M_InternationalRectifier.pdf
Additional preview pages of the IRGBC40M datasheet.

IRGBC40M Product details

Description

Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have higher usable current densities than comparable bipolar transistors, while at the same time having simpler gate-drive requirements of the familiar power MOSFET.

Features

Short circuit rated - 10µs @ 125°C, VGE = 15V.
Switching-loss rating includes all "tail" losses.
Optimized for medium operating frequency (1 to 10kHz) G E C Short Circuit Rated Fast IGBT VCES = 600V VCE(sat) ≤ 3.0V @VGE = 15V, IC = 24A n-channel.

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Published: Mar 19, 2007 |