Download IRGBC40M-S Datasheet PDF
IRGBC40M-S page 2
Page 2

IRGBC40M-S Description

Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have higher usable current densities than parable bipolar transistors, while at the same time having simpler gate-drive requirements of the familiar power MOSFET. They provide substantial benefits to a host of high-voltage, highcurrent applications. These new short circuit rated devices are especially suited for motor control and other...

IRGBC40M-S Key Features

  • Short circuit rated
  • 10µs @ 125°C, V GE = 15V
  • Switching-loss rating includes all "tail" losses
  • Optimized for medium operating frequency (1 to 10kHz)