IRGBC40M - INSULATED GATE BIPOLAR TRANSISTOR

Product Overview

International Rectifier

Datasheet Details

Part number	IRGBC40M
Manufacturer	International Rectifier
File Size	58.58 KB
Description	INSULATED GATE BIPOLAR TRANSISTOR
Datasheet	IRGBC40M Datasheet
Additional preview pages of the IRGBC40M datasheet.

Product details

Description

Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have higher usable current densities than comparable bipolar transistors, while at the same time having simpler gate-drive requirements of the familiar power MOSFET.

Features

Short circuit rated - 10µs @ 125°C, VGE = 15V.
Switching-loss rating includes all "tail" losses.
Optimized for medium operating frequency (1 to 10kHz) G E C Short Circuit Rated Fast IGBT VCES = 600V VCE(sat) ≤ 3.0V @VGE = 15V, IC = 24A n-channel.

📁 Similar Datasheet

IRGB4620DPbF - IGBT (Infineon)
IRGB4630DPbF - IGBT (Infineon)
IRGB4640DPbF - Insulated Gate Bipolar Transistor (Infineon)
IRG4BC20F - INSULATED GATE BIPOLAR TRANSISTOR (IRF)
IRG4BC20FD - INSULATED GATE BIPOLAR TRANSISTOR (IRF)
IRG4BC20FD-S - INSULATED GATE BIPOLAR TRANSISTOR (IRF)
IRG4BC20K - INSULATED GATE BIPOLAR TRANSISTOR (IRF)
IRG4BC20K-S - INSULATED GATE BIPOLAR TRANSISTOR (IRF)

Other Datasheets by International Rectifier

IRGBC40M-S - INSULATED GATE BIPOLAR TRANSISTOR
IRGBC40F - INSULATED GATE BIPOLAR TRANSISTOR
IRGBC40K - INSULATED GATE BIPOLAR TRANSISTOR
IRGBC40K-S - UltraFast Fast IGBT
IRGBC40S - INSULATED GATE BIPOLAR TRANSISTOR
IRGBC40U - INSULATED GATE BIPOLAR TRANSISTOR

Published: Mar 19, 2007 |