Datasheet4U Logo Datasheet4U.com

IRGBC40M Datasheet INSULATED GATE BIPOLAR TRANSISTOR

Manufacturer: International Rectifier (now Infineon)

General Description

Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have higher usable current densities than comparable bipolar transistors, while at the same time having simpler gate-drive requirements of the familiar power MOSFET.

They provide substantial benefits to a host of high-voltage, highcurrent applications.

These new short circuit rated devices are especially suited for motor control and other applications requiring short circuit withstand capability.

Overview

www.DataSheet4U.com Preliminary Data Sheet PD - 9.1074 IRGBC40M INSULATED GATE BIPOLAR.

Key Features

  • Short circuit rated - 10µs @ 125°C, VGE = 15V.
  • Switching-loss rating includes all "tail" losses.
  • Optimized for medium operating frequency (1 to 10kHz) G E C Short Circuit Rated Fast IGBT VCES = 600V VCE(sat) ≤ 3.0V @VGE = 15V, IC = 24A n-channel.