Description
Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have higher usable current densities than comparable bipolar transistors, while at the same time having simpler gate-drive requirements of the familiar power MOSFET.
Features
- Short circuit rated - 10µs @ 125°C, VGE = 15V.
- Switching-loss rating includes all "tail" losses.
- Optimized for medium operating frequency (1 to 10kHz)
G E C
Short Circuit Rated Fast IGBT
VCES = 600V VCE(sat) ≤ 3.0V
@VGE = 15V, IC = 24A
n-channel.
IRGBC40M Datasheet
