Datasheet Details
| Part number | IRGBC40F |
|---|---|
| Manufacturer | International Rectifier (now Infineon) |
| File Size | 189.96 KB |
| Description | INSULATED GATE BIPOLAR TRANSISTOR |
| Download | IRGBC40F Download (PDF) |
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| Part number | IRGBC40F |
|---|---|
| Manufacturer | International Rectifier (now Infineon) |
| File Size | 189.96 KB |
| Description | INSULATED GATE BIPOLAR TRANSISTOR |
| Download | IRGBC40F Download (PDF) |
|
|
|
Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have higher usable current densities than comparable bipolar transistors, while at the same time having simpler gate-drive requirements of the familiar power MOSFET.
They provide substantial benefits to a host of high-voltage, highcurrent applications.
TO-220AB Absolute Maximum Ratings Parameter VCES IC @ TC = 25°C IC @ TC = 100°C ICM ILM VGE EARV PD @ TC = 25°C PD @ TC = 100°C TJ TSTG Collector-to-Emitter Voltage Continuous Collector Current Continuous Collector Current Pulsed Collector Current Clamped Inductive Load Current Gate-to-Emitter Voltage Reverse Voltage Avalanche Energy Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Temperature, for 10 sec.
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| Part Number | Description |
|---|---|
| IRGBC40K | INSULATED GATE BIPOLAR TRANSISTOR |
| IRGBC40K-S | UltraFast Fast IGBT |
| IRGBC40M | INSULATED GATE BIPOLAR TRANSISTOR |
| IRGBC40M-S | INSULATED GATE BIPOLAR TRANSISTOR |
| IRGBC40S | INSULATED GATE BIPOLAR TRANSISTOR |
| IRGBC40U | INSULATED GATE BIPOLAR TRANSISTOR |
| IRGBC20F | INSULATED GATE BIPOLAR TRANSISTOR |
| IRGBC20K-S | INSULATED GATE BIPOLAR TRANSISTOR |
| IRGBC20KD2 | INSULATED GATE BIPOLAR TRANSISTOR |
| IRGBC20KD2-S | INSULATED GATE BIPOLAR TRANSISTOR |